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300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 1 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited general description the AP2115 is positive voltage regulator ic designed by cmos process. the AP2115 has features of low dropout voltage, hi gh output voltage accuracy and low current consumption. it consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit circuit for current protection, a circuit for over temperature protection and a chip enable circuit. thus, the AP2115 is suitable for various power sources for portable application. the AP2115 is available in standard sot-23-5 pack- age. features high ripple rejection: 70db at f=1khz ultra low dropout voltage: 0.3v typical at i out =300ma low operation current: 80 a typical high line regulation: 4mv typical high load regulation: 12mv typical at i out =300ma low temperature-drift coefficient of output voltage high output voltage accuracy: 2% excellent line transient response and load transient response output voltage: 1.8v, 2.5v, 2.8v, 3.0v, 3.3v low esr capacitor compatible wide temperature range: -40 o c to 125 o c current and thermal protection application mobile phones, cordless phones portable games cameras portable av equipment battery powered equipment sot-23-5 figure 1. package type of AP2115 ( datasheet : )
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 2 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited figure 2. pin configuration of AP2115 (top view) k package (sot-23-5) pin configuration 1 2 34 5 v out gnd nc ce/ce pin description pin number pin name function 1v out voltage regulator output pin 2 gnd ground pin 3v in input voltage pin 4 ce/ce active high/low enable i nput pin (active high for AP2115b) 5 nc no connection v in
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 3 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited functional block diagram error amplifier voltage reference over-current protection over-temperature protection v in ce/ce 3 4 v out gnd 1 2 active high version figure 3. functional block diagram of AP2115 ordering information circuit type package k: sot-23-5 1.8: fixed output 1.8v 2.5: fixed output 2.5v e1: lead free blank: tin lead AP2115 tr: tape and reel - 2.8: fixed output 2.8v 3.0: fixed output 3.0v 3.3: fixed output 3.3v b: active high (no pull-down resistor built-in)
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 4 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited package temperature range part number marking id packing type tin lead lead free tin lead lead free sot-23-5 -40 to 125 o c AP2115bk-1.8tr AP2115bk-1.8tre1 k7b e7b tape & reel AP2115bk-2.5tr AP2115bk-2.5tre1 k7d e7d tape & reel AP2115bk-2.8tr AP2115bk-2.8tre1 k7f e7f tape & reel AP2115bk-3.0tr AP2115bk-3.0tre1 k7h e7h tape & reel AP2115bk-3.3tr AP2115bk-3.3tre 1 k7j e7j tape & reel parameter symbol min max unit input voltage (note 3) v in 2.2 6.5 v operating junction temperature range t j -40 125 o c note 1: stresses greater than those listed under "absolute maximum rati ngs" may cause permanent damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. note 2: all voltage values are with respect to network ground terminal. absolute maximum ratings (note 1) parameter symbol value unit input voltage (note 2) v in -0.3 to 8 v input voltage (ce/ce pin) v shdn -0.3 to v in +0.3 v output voltage v out -0.3 to v in +0.3 v output current i out 500 ma power dissipation p d 250 mw storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 300 o c esd (machine model) esd 200 v bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. ordering information (continued) note 3: to calculate the minimum input voltage for maximum output current, the following formula is recommended: v in(min) =v out(max) +v drop(max load) recommended operating conditions
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 5 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage v out 1ma i out 30ma 1.764 1.8 1.836 v output current i out 300 ma current limit 500 ma quiescent current 80 150 a ground pin current i gnd i out =300ma 90 150 a dropout voltage (note 4) v drop i out =1ma 400 600 mv i out =50ma 400 600 i out =200ma 400 600 i out =300ma 600 900 load regulation v rload 1ma i out 300ma 7.2 18 mv line regulation v rline v out +0.5v v in 6v i out =30ma 415mv ce/ce input high threshold v ih 1.5 v ce/ce input low threshold v il 0.4 v ce/ce bias current i sd 100 na shutdown supply current i gsd v out =0v 0.1 1 a thermal shutdown temperature t sd 165 o c power supply ripple rejection psrr ripple 0.5v p-p f=1khz, i out =30ma 70 db output voltage temperature coefficient ? v out / ? ti out =30ma -40 o c t j 125 o c 180 v/ o c short current limit i limit v out =0v 450 ma turn-on time (note 5) t on 60 s rms output noise v noise t a =25 o c 10hz f 100 khz 200 vrms v in = v out + 1v, t a =25 o c, c in =1 f, c l =1 f, unless otherwise specified. electrical characteristics AP2115-1.8v electri cal characteristics note 4: dropout voltage is de fined as the input-to-output diff erential when the output voltage drops to 98% of its nominal value which is measured at v out +1v applied to v in . the 1.8v version dropout voltage is limi ted by the input voltage range. note 5: turn-on time is time measured between the enable input just exceeding v ih and the output voltage just reaching 95% of its nominal value.
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 6 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited AP2115-2.5v electri cal characteristics electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out 1ma i out 30ma 2.45 2.5 2.55 v output current i out 300 ma current limit 500 ma quiescent current 80 150 a ground pin current i gnd i out =300ma 90 150 a dropout voltage (note 4) v drop i out =1ma 1 5 mv i out =50ma 50 75 i out =200ma 200 300 i out =300ma 300 450 load regulation v rload 1ma i out 300ma 10 25 mv line regulation v rline v out +0.5v v in 6v i out =30ma 415mv ce/ce input high threshold v ih 1.5 v ce/ce input low threshold v il 0.4 v ce/ce bias current i sd 100 na shutdown supply current i gsd v out =0v 0.1 1 a thermal shutdown temperature t sd 165 o c power supply ripple rejection psrr ripple 0.5v p-p f=1khz, i out =30ma 70 db output voltage temperature coefficient ? v out / ? ti out =30ma -40 o c t j 125 o c 250 v/ o c short current limit i limit v out =0v 450 ma turn-on time (note 5) t on 60 s rms output noise v noise t a =25 o c 10hz f 100 khz 200 vrms v in = v out + 1v, t a =25 o c, c in =1 f, c l =1 f, unless otherwise specified. note 4: dropout voltage is de fined as the input-to-output diff erential when the output voltage drops to 98% of its nominal value which is measured at v out +1v applied to v in . note 5: turn-on time is time measured between the enable input just exceeding v ih and the output voltage just reaching 95% of its nominal value.
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 7 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited AP2115-2.8v electri cal characteristics electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out 1ma i out 30ma 2.744 2.8 2.856 v output current i out 300 ma current limit 500 ma quiescent current 80 150 a ground pin current i gnd i out =300ma 90 150 a dropout voltage (note 4) v drop i out =1ma 1 5 mv i out =50ma 50 75 i out =200ma 200 300 i out =300ma 300 450 load regulation v rload 1ma i out 300ma 11.2 28 mv line regulation v rline v out +0.5v v in 6v i out =30ma 415mv ce/ce input high threshold v ih 1.5 v ce/ce input low threshold v il 0.4 v ce/ce bias current i sd 100 na shutdown supply current i gsd v out =0v 0.1 1 a thermal shutdown temperature t sd 165 o c power supply ripple rejection psrr ripple 0.5v p-p f=1khz, i out =30ma 70 db output voltage temperature coefficient ? v out / ? ti out =30ma -40 o c t j 125 o c 280 v/ o c short current limit i limit v out =0v 450 ma turn-on time (note 5) t on 60 s rms output noise v noise t a =25 o c 10hz f 100 khz 200 vrms v in = v out + 1v, t a =25 o c, c in =1 f, c l =1 f, unless otherwise specified. note 4: dropout voltage is de fined as the input-to-output diff erential when the output voltage drops to 98% of its nominal value which is measured at v out +1v applied to v in . note 5: turn-on time is time measured between the enable input just exceeding v ih and the output voltage just reaching 95% of its nominal value.
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 8 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited AP2115-3.0v electri cal characteristics electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out 1ma i out 30ma 2.94 3.0 3.06 v output current i out 300 ma current limit 500 ma quiescent current 80 150 a ground pin current i gnd i out =300ma 90 150 a dropout voltage (note 4) v drop i out =1ma 1 5 mv i out =50ma 50 75 i out =200ma 200 300 i out =300ma 300 450 load regulation v rload 1ma i out 300ma 12 30 mv line regulation v rline v out +0.5v v in 6v i out =30ma 415mv ce/ce input high threshold v ih 1.5 v ce/ce input low threshold v il 0.4 v ce/ce bias current i sd 100 na shutdown supply current i gsd v out =0v 0.1 1 a thermal shutdown temperature t sd 165 o c power supply ripple rejection psrr ripple 0.5v p-p f=1khz, i out =30ma 70 db output voltage temperature coefficient ? v out / ? ti out =30ma -40 o c t j 125 o c 300 v/ o c short current limit i limit v out =0v 450 ma turn-on time (note 5) t on 60 s rms output noise v noise t a =25 o c 10hz f 100 khz 200 vrms v in = v out + 1v, t a =25 o c, c in =1 f, c l =1 f, unless otherwise specified. note 4: dropout voltage is de fined as the input-to-output diff erential when the output voltage drops to 98% of its nominal value which is measured at v out +1v applied to v in . note 5: turn-on time is time measured between the enable input just exceeding v ih and the output voltage just reaching 95% of its nominal value.
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 9 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited AP2115-3.3v electri cal characteristics electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out 1ma i out 30ma 3.234 3.3 3.366 v output current i out 300 ma current limit 500 ma quiescent current 80 150 a ground pin current i gnd i out =300ma 90 150 a dropout voltage (note 4) v drop i out =1ma 1 5 mv i out =50ma 50 75 i out =200ma 200 300 i out =300ma 300 450 load regulation v rload 1ma i out 300ma 13.2 33 mv line regulation v rline v out +0.5v v in 6v i out =30ma 415mv ce/ce input high threshold v ih 1.5 v ce/ce input low threshold v il 0.4 v ce/ce bias current i sd 100 na shutdown supply current i gsd v out =0v 0.1 1 a thermal shutdown temperature t sd 165 o c power supply ripple rejection psrr ripple 0.5v p-p f=1khz, i out =30ma 70 db output voltage temperature coefficient ? v out / ? ti out =30ma -40 o c t j 125 o c 330 v/ o c short current limit i limit v out =0v 450 ma turn-on time (note 5) t on 60 s rms output noise v noise t a =25 o c 10hz f 100 khz 200 vrms v in = v out + 1v, t a =25 o c, c in =1 f, c l =1 f, unless otherwise specified. note 4: dropout voltage is de fined as the input-to-output diff erential when the output voltage drops to 98% of its nominal value which is measured at v out +1v applied to v in . note 5: turn-on time is time measured between the enable input just exceeding v ih and the output voltage just reaching 95% of its nominal value.
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 10 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited typical performance characteristics figure 4. output voltage vs. input voltage figure 6. output volt age vs. temperature 12345678 1.0 1.5 2.0 2.5 3.0 output voltage (v) input voltage (v) AP2115-3.0v t a =25 o c i out =10ma i out =200ma -40 -20 0 20 40 60 80 100 120 2.90 2.92 2.94 2.96 2.98 3.00 3.02 3.04 3.06 3.08 3.10 output voltage (v) AP2115-3.0v v in =4v i out =1ma ambient temperature ( o c) 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 output voltage (v) input voltage (v) AP2115-1.8v t a =25 o c i out =10ma figure 5. output voltage vs. input voltage -40 -20 0 20 40 60 80 100 120 1.700 1.725 1.750 1.775 1.800 1.825 1.850 1.875 1.900 output voltage (v) ambient temperature ( o c) AP2115-1.8v v in =4v i out =10ma figure 7. output volt age vs. temperature
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 11 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited figure 8. input voltage vs. supply current (no load) figure 9. dropout voltage vs. ambient temperature typical performance characteristics 123456 0 20 40 60 80 100 supply current ( a) input voltage (v) AP2115-3.0v t a =25 o c -40 -20 0 20 40 60 80 100 120 0.10 0.15 0.20 0.25 0.30 dropout voltage (v) ambient temperature ( o c) AP2115-3.0v i out =200ma figure 10. dropout voltage vs. output current 0 25 50 75 100 125 150 175 200 225 250 275 300 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 dropout voltage (mv) output current (ma) AP2115-3.0v t a =25 o c 0 100 200 300 0 100 200 300 400 500 600 dropout voltage (mv) output current (ma) AP2115-1.8v t a =25 o c figure 11. dropout voltage vs. output current
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 12 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited figure 12. ripple rejection vs. frequency 10 100 1000 10000 100000 30 40 50 60 70 80 90 ripple rejection (db) frequency (hz) AP2115-3.0v v in =4v i out =30ma t a =25 o c figure 13. output voltag e vs. ambient temperature 100 110 120 130 140 150 160 170 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 AP2115-3.0v v in =4v i out =1ma output voltage (v) ambient temperature ( o c) typical performance ch aracteristics (continued) figure 14. load transient output current change of output voltage v in =4.0v figure 15. line transient input voltage change of output voltage i out =30ma
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 13 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited figure 16. line transient input voltage change of output voltage typical performance ch aracteristics (continued) i out =300ma
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 14 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited typical application figure 17. typical application of AP2115 note: filter capacitors are required at the AP2115's input and output. 1 f capacitors are required at the input. the minimum output capacitance required for stability should be 1 f with esr from 0.1 ? to 10 ?. 1 2 3 4 5 c out v in gnd v out c in 1 ce/ce nc v in v out 1 f f ce/ce
300ma fixed output voltage ldo regulator AP2115 preliminary datasheet 15 oct. 2005 rev. 1. 0 bcd semiconductor manufacturing limited mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 1 . 0 5 0 ( 0 . 0 4 1 ) 0.300(0.012) 0.950(0.037) 1 . 0 5 0 ( 0 . 0 4 1 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 1 . 2 5 0 ( 0 . 0 4 9 ) 0 . 1 0 0 ( 0 . 0 0 4 ) 1 . 1 5 0 ( 0 . 0 4 5 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office 27b, tower c, 2070, middle shen nan road, shenzhen 518031, china tel: +86-755-8368 3987, fax: +86-755-8368 3166 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a tel: +1-408-988 6388, fax: +1-408-988 6386 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

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